Simulating Quasi-ballistic Transport in Si Nanotransistors
نویسندگان
چکیده
منابع مشابه
Simulating Quasi-Ballistic Transport in Si Nanotransistors
Electron transport in model Si nanotransistors is examined by numerical simulation using a hierarchy of simulation methods, from full Boltzmann, to hydrodynamic, energy transport, and drift-diffusion. The on-current of a MOSFET is shown to be limited by transport across a lowfield region about one mean-free-path long and located at the beginning of the channel. Commonly used transport models ba...
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ژورنال
عنوان ژورنال: VLSI Design
سال: 2001
ISSN: 1065-514X,1563-5171
DOI: 10.1155/2001/16023